Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes / C.M. Schnabel [and six others].
- Physical Description: 1 online resource (4 pages) : illustrations.
- Publisher: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2000.
|General Note:|| "February 2000."
"Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999."
"Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
|Bibliography, etc. Note:|| Includes bibliographical references (page 4).
|Type of Report and Period Covered Note:|| Technical memorandum.
|Funding Information Note:|| Sponsored by the National Aeronautics and Space Administration WU-505-23-2Q-00 E-11996
|Source of Description Note:|| Description based on online resource; title from PDF title page (NASA, viewed Oct. 25, 2017).
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