Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes / C.M. Schnabel [and six others].
- Physical Description: 1 online resource (4 pages) : illustrations.
- Publisher: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2000.
"Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999."
"Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
|Bibliography, etc. Note:||
Includes bibliographical references (page 4).
|Type of Report and Period Covered Note:||
|Funding Information Note:||
Sponsored by the National Aeronautics and Space Administration WU-505-23-2Q-00 E-11996
|Source of Description Note:||
Description based on online resource; title from PDF title page (NASA, viewed Oct. 25, 2017).
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