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Impact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass  Cover Image

Impact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass / Albert J. Juhasz, Roy C. Tew, and Gene E. Schwarze.

Juhasz, Albert J., (author.). Tew, Roy C., (author.). Schwarze, Gene E., (author.). Lewis Research Center, (issuing body.).

Record details

  • Physical Description: 1 online resource (6 pages) : illustrations.
  • Publisher: Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, December 1998.

Content descriptions

General Note:
"December 1998."
"Prepared for the Space Technology and Applications International Forum cosponsored by the Boeing Company, Lockheed Martin, National Aeronautics and Space Administration, U.S. Air Force, and the U.S. Department of Energy, Albuquerque, New Mexico, January 31-February 4, 1999."
"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
Bibliography, etc. Note:
Includes bibliographical references (page 6).
Type of Report and Period Covered Note:
Technical memorandum.
Funding Information Note:
Sponsored by the National Aeronautics and Space Administration WU-632-1A-1G-00 E-11453
Source of Description Note:
Description based on online resource; title from PDF title page (NASA, viewed Aug. 16, 2017).


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