Surface and interface study of PdCr/SiC Schottky diode gas sensor annealed at 425 °C / Liang-Yu Chen [and three others].
- Physical Description: 1 online resource (6 pages) : illustrations.
- Publisher: Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, May 1998.
|General Note:|| "May 1998."
"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
|Bibliography, etc. Note:|| Includes bibliographical references (page 6).
|Type of Report and Period Covered Note:|| Technical memorandum.
|Funding Information Note:|| Sponsored by the National Aeronautics and Space Administration WU-523-26-13-00 E-11155
|Source of Description Note:|| Description based on online resource; title from PDF title page (NASA, viewed July 24, 2017).
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