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The role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in mobile technology platforms / by Gregory A. Mitchell.

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Record details

  • Physical Description: 1 online resource (vi, 30 pages) : illustrations.
  • Publisher: Adelphi, MD : Army Research Laboratory, September 2011.

Content descriptions

General Note:
"Approved for public release; distribution unlimited."
Bibliography, etc. Note:
Includes bibliographical references (page 27).
Type of Report and Period Covered Note:
Final; January to May 2011.
Source of Description Note:
Description based on online resource, PDF version; title from title page (ARL, viewed July 13, 2017).
Subject: Bipolar transistors.
Silicon.
Germanium.
Digital communications.

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