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Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / Jon C. Freeman.

Freeman, Jon C. (Author). NASA Glenn Research Center. (Added Author).
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Available copies

  • 2 of 2 copies available at Evergreen Indiana.

Current holds

0 current holds with 2 total copies.

Series Information

NASA technical memorandum
Location Call Number / Copy Notes Barcode Shelving Location Status Due Date
Indiana State Library - Indianapolis NAS 1.15:211983 (Text) 755955-1001 General Federal documents Available -
Indiana State Library - Indianapolis NAS 1.15:211983 (Text) 755955-1002 Online document Available -

Record details

  • Physical Description: 1 volume.
  • Publisher: [Cleveland, Ohio] : National Aeronautics and Space Administration, Glenn Research Center ; [2003]

Content descriptions

General Note:
Shipping list no.: 2003-0339-M.
Additional Physical Form available Note:
Also available via Internet from the Glenn Research Center web site. Address as of 1/21/04: http://gltrs.grc.nasa.gov/reports/2003/TM-2003-211 983.pdf; current access available via PURL.
Reproduction Note:
Microfiche. [Washington, D.C.] : Supt. of Docs., U.S. G.P.O., [2003] 1 microfiche.

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