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The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon / Sheng S. Li, Department of Electrical Engineering, University of Florida.

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Available copies

  • 1 of 1 copy available at Evergreen Indiana.

Current holds

0 current holds with 1 total copy.

Series Information

Semiconductor measurement technology.
NBS special publication
Location Call Number / Copy Notes Barcode Shelving Location Status Due Date
Indiana State Library - Indianapolis C 13.10:400-47 (Text) 406896-1001 General Federal documents Available -

Record details

  • Physical Description: vi, 42 pages : illustrations ; 27 cm.
  • Publisher: [Washington] : Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979.

Content descriptions

General Note:
"This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation."
CODEN: XNBSAV.
Bibliography, etc. Note:
Includes bibliographical references.
Subject: Holes (Electron deficiencies)
Semiconductor doping.
Silicon > Defects.

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