The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon / Sheng S. Li, Department of Electrical Engineering, University of Florida.
- 1 of 1 copy available at Evergreen Indiana.
0 current holds with 1 total copy.
|Location||Call Number / Copy Notes||Barcode||Shelving Location||Status||Due Date|
|Indiana State Library - Indianapolis||C 13.10:400-47 (Text)||406896-1001||General Federal documents||Available||-|
- Physical Description: vi, 42 pages : illustrations ; 27 cm.
- Publisher: [Washington] : Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1979.
"This activity was supported by the Defense Advanced Research Projects Agency and the National Science Foundation."
|Bibliography, etc. Note:||
Includes bibliographical references.
Search for related items by subject
|Subject:||Holes (Electron deficiencies)
Silicon > Defects.